Investigation the dielectrical and electromechanical properties of PZT thin films
نویسنده
چکیده
We have studied thedielectric and electromechanical properties of pure and doped Pb(Zr0.53Ti0.47)O3thin films.Samples were prepared bya sol-gel method and werecalcined at temperatures of 700oC for two hours in a Pb-rich atmosphere.It was observed a negligible effect occurs during the tetragonal–rhombohedral transition in the preparedpure and doped PZT thin films.The optimal amount of electrical parameters were obtained to be 945, 323 pC/N, 40 mV/N, and 300 for dielectric constant, charge constant, Voltage constant, and Quality factor, respectively. Also the electromechanical coupling factor (kp) was found to be0.49for the dopedPZT
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